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this is information on a product in full production. february 2015 docid026382 rev 2 1/15 STH170N8F7-2 n-channel 80 v, 0.0028 typ., 120 a, stripfet? f7 power mosfet in a h2pak-2 package datasheet ? production data figure 1. internal schematic diagram features ? among the lowest r ds(on) on the market ? excellent figure of merit (fom) ? low c rss /c iss ratio for emi immunity ? high avalanche ruggedness applications ? switching applications description this n-channel power mosfet utilizes stripfet? f7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. +3$. '7$% * 6 1 2 3 tab h 2 pak-2 order code v ds r ds(on) max. i d p tot STH170N8F7-2 80 v 0.0037 120 a 250 w table 1. device summary order code marking package packaging STH170N8F7-2 170n8f7 h 2 pak-2 tape and reel www.st.com
contents STH170N8F7-2 2/15 docid026382 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
docid026382 rev 2 3/15 STH170N8F7-2 electrical ratings 15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 80 v v gs gate-source voltage 20 v i d (1) 1. limited by package and rated according to r thj-c . drain current (continuous) 120 a i d (1) drain current (continuous) at t c = 100 c 120 a i dm drain current (pulsed) 480 a p tot (1) total dissipation at t c = 25 c 250 w t j operating junction temperature -55 to 175 c t stg storage temperature c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case 0.6 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1 inch 2 , 2oz cu. thermal resistance junction-pcb 35 c/w table 4. avalanche data symbol parameter value unit i av not-repetitive avalanche current, (pulse width limited by t jmax ) 35 a e as single pulse avalanche energy (starting tj = 25 c, i d = i av , v dd = 50 v) 615 mj
electrical characteristics STH170N8F7-2 4/15 docid026382 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 250 a 80 v i dss zero gate voltage drain current v gs = 0, v ds = 80 v 1 a v gs = 0, v ds = 80 v, t c =125 c 100 a i gss gate body leakage current v ds = 0, v gs = +20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.5 4.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 60 a 0.0028 0.0037 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs =0, v ds =40 v, f=1 mhz, - 8710 - pf c oss output capacitance - 1330 - pf c rss reverse transfer capacitance -78 - pf q g total gate charge v dd =40 v, i d = 120 a v gs =10 v figure 14 -120 - nc q gs gate-source charge - 43 - nc q gd gate-drain charge - 26 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 40 v, i d = 60 a, r g = 4.7 , v gs = 10 v figure 13 -38-ns t r rise time - 53 - ns t d(off) turn-off delay time - 79 - ns t f fall time - 37 - ns
docid026382 rev 2 5/15 STH170N8F7-2 electrical characteristics 15 table 8. source-drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 120 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 480 a v sd (2) 2. pulsed: pulse duration=300 s, duty cycle 1.5%. forward on voltage i sd = 120 a, v gs =0 - 1.2 v t rr reverse recovery time i sd = 120 a, di/dt = 100 a/s, v dd = 64 v, t j =150 c -54 ns q rr reverse recovery charge - 78 nc i rrm reverse recovery current - 2.9 a
electrical characteristics STH170N8F7-2 6/15 docid026382 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v pv pv 7m ?& 7f ?& 6lqjohsxovh *,3*6$ single pulse =0.5 0.05 0.02 0.01 0.1 0.2 k 10 t p (s) -4 10 -3 10 -1 10 -5 10 -2 10 -2 10 -1 c 10 0 gipg300420141527sa , ' 9 '6 9 $ 9 9 9 *6 9 9 9 *,3*6$ , ' 9 *6 9 $ 9 '6 9 *,3*6$ 9 *6 4 j q& 9 9 '' 9 , ' $ *,3*6$ 5 '6rq , ' $ p 9 *6 9 *,3*6$
docid026382 rev 2 7/15 STH170N8F7-2 electrical characteristics 15 figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature & 9 '6 9 s) &lvv &rvv &uvv *,3*6$ 9 *6wk 7 - ?& qrup , ' ?$ *,3*6$ figure 10. normalized on-resistance vs temperature figure 11. normalized v (br)dss vs temperature figure 12. source-drain diode forward characteristics 5 '6rq 7 - ?& qrup , ' $ 9 *6 9 *,3*6$ 9 %5'66 7 - ?& qrup , ' p$ *,3*6$ 9 6' , 6' $ 9 7 - ?& 7 - ?& 7 - ?& *,3*6$
test circuits STH170N8F7-2 8/15 docid026382 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid026382 rev 2 9/15 STH170N8F7-2 package information 15 4 package information figure 19. h2pak-2 outline 8159712_d
package information STH170N8F7-2 10/15 docid026382 rev 2 table 9. h2pak-2 mechanical data dim. mm min. typ. max. a4.30 - 4.80 a1 0.03 0.20 c1.17 1.37 e4.98 5.18 e0.50 0.90 f0.78 0.85 h 10.00 10.40 h1 7.40 7.80 l 15.30 15.80 l1 1.27 1.40 l2 4.93 5.23 l3 6.85 7.25 l4 1.5 1.7 m2.6 2.9 r0.20 0.60 v0 8
docid026382 rev 2 11/15 STH170N8F7-2 package information 15 figure 20. h2pak-2 recommended footprint (dimensions are in mm) 8159712_d
packing information STH170N8F7-2 12/15 docid026382 rev 2 5 packing information figure 21. tape p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius top cover tape am08852v2
docid026382 rev 2 13/15 STH170N8F7-2 packing information 15 figure 22. reel table 10. h2pak-2 tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 a d b full radius g measured at hub c n reel dimensions 40 mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history STH170N8F7-2 14/15 docid026382 rev 2 6 revision history table 11. document revision history date revision changes 20-may-2014 1 first release. 20-feb-2015 2 document status promoted from preliminary to production data. updated section 4: package information . updated title, features and description in cover page.
docid026382 rev 2 15/15 STH170N8F7-2 15 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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